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Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

Published online by Cambridge University Press:  26 February 2011

John W. Farmer ,
Harold P. Hjalmarson  and
G. A. Samara
John W. Farmer
Affiliation:
University of Missouri Research Reactor Facility, Research Park, Columbia, Missouri 65201.
Harold P. Hjalmarson
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185.
G. A. Samara
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185.
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Abstract

Pressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 585
Copyright
Copyright © Materials Research Society 1988

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References

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