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Pressure Effect of Seebeck Coeffcient for Zinc Doped Tin Clathrates

Published online by Cambridge University Press:  21 March 2011

F. Chen ,
K. L. Stokes  and
G. S. Nolas
F. Chen
Affiliation:
Advanced Material Research Institute, University of New Orleans, New Orleans, LA 70108, U.S.A
K. L. Stokes
Affiliation:
Advanced Material Research Institute, University of New Orleans, New Orleans, LA 70108, U.S.A
G. S. Nolas
Affiliation:
Department of Physics, University of South Florida, Tampa, FL 33620, U.S.A
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Abstract

We measured the temperature dependence of electrical resistance (R) and thermopower (S) of Cs8Zn4Sn42 under high pressure up to 1.2 GPa. Both R and ∣S∣ at room temperature increased with pressure. We observed gap widening, irreversible ∣S∣ increasing under high pressure, which were similar to the behaviors of Cs8Sn44. However, the relaxation e.ect of R for Cs8Zn4Sn42 was negligible in contrast with that of Cs8Sn44. We found that the power factor S2σ (σ: electrical conductivity) near room temperature decreased linearly with pressure. The results suggest that the defects in different forms played an important role in transport properties for tin clathrates under high pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G4.4
Copyright
Copyright © Materials Research Society 2002

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