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Pressure Dependence of Arsenic Diffusivity in Silicon

Published online by Cambridge University Press:  21 February 2011

Eric Nygren ,
Michael J. Aziz ,
David Turnbull ,
James F. Hays ,
John M. Poate ,
Dale C. Jacobson  and
Robert Hull
Eric Nygren
Affiliation:
Allied Corp. Fellow
Michael J. Aziz
Affiliation:
Present address Oak Ridge National Laooratory, Oak Ridge, TN. 37831
David Turnbull
Affiliation:
Harvard Unversity, Cambridge, MA 02138
James F. Hays
Affiliation:
Present address National Science Foundation, Washington, DC 20550
John M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Dale C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Robert Hull
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000°C under pressures up to 30 kilobars. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of ten. This diffusivity enhancement can be described by an average activation volume of -5.7±.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 eV to 3.6 eV at 30 kilobars

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 77
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

[1] Hu, S. M., in Atomic Diffusion in Semiconductors, ed. Shaw, D. (Plenum, London, 1972)Google Scholar
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