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Preparation of Quantum-Sized Semiconductor Sulfide-Doped Gels

Published online by Cambridge University Press:  15 February 2011

T. Gacoin ,
J.P. Boilot ,
F. Chaput  and
A. Lecomte
T. Gacoin
Affiliation:
Groupe de Chimie du Solide, Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau (FRANCE)
J.P. Boilot
Affiliation:
Groupe de Chimie du Solide, Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau (FRANCE)
F. Chaput
Affiliation:
Groupe de Chimie du Solide, Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau (FRANCE)
A. Lecomte
Affiliation:
E.N.S. Céramique Industrielle, 47 Av. A. Thomas, 87065 Limoges (FRANCE)
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Abstract

Ultrasmall semiconductor particles (CdS, ZnS and PbS) are produced either by direct precipitation, γ-radiolysis or in mimetic membranes. A pure cluster powder is then prepared from a chemical capping reaction. The capping of the cluster surface by thiolate complexes permits the separation of aggregates without fusion. These capped clusters can be dispersed in different solvents such as sol-gel precursors allowing to prepare dense and optically transparent xerogels with semiconductor clusters grafted on oxide polymers. The nanocrystallites are characterized by X-ray diffraction, small-angle X-ray scattering and optical spectroscopy.

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References

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