Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-02-04T16:49:47.263Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of Microcrystalline Silicon with the Layer-by-Layer Technique at Various Plasma Excitation Frequencies

Published online by Cambridge University Press:  15 February 2011

P. Hapke ,
R. Carius ,
F. Finger ,
A. Lambertz ,
O. Vetterl  and
H. Wagner
P. Hapke
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
R. Carius
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
F. Finger
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
A. Lambertz
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
O. Vetterl
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
H. Wagner
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
Get access

Abstract

For application as nucleation layer in thin film devices, microcrystalline silicon was deposited with the layer-by-layer technique using plasma excitation frequencies between 27 and 95 MHz, various hydrogen treatment times and various film thicknesses per layer. An optimum phase transformation is found at an intermediate plasma excitation frequency, i.e. at this frequency the shortest hydrogen annealing time is necessary for an effective amorphous-to-crystalline phase transformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 737
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Finger, F., Carius, R., Hapke, P., Houben, L., Luysberg, M. and Tzolov, M., this conference.Google Scholar
2.Luysberg, M., Hapke, P., Carius, R. and Finger, F., Phil. Mag. A (1996), in press.Google Scholar
3.Finger, F., Hapke, P., Luysberg, M., Carius, R., Wagner, H. and Scheib, M., Appl. Phys. Lett. 65, 2588 (1994).Google Scholar
4.Hapke, P., Luysberg, M., Carius, R., Tzolov, M., Finger, F. and Wagner, H., J. Non-Crystalline Solids 198–200, 927 (1996).Google Scholar
5.Asano, A., Appl. Phys. Lett. 56, 533 (1990).Google Scholar
6.Nguyen, H.V., An, I., Collins, R., Lu, Y., Wagaki, M. and Wronski, C., Appl. Phys. Lett. 65, 3335 (1994).Google Scholar
7.Fortmann, C., Hapke, P., Lambertz, A. and Finger, F. in Amorphous Silicon Technologv-1996. edited by Hack, M., Schiff, E.A., Wagner, S., Matsuda, A., Schropp, R. (Mater. Res. Soc. Proc. 420, Pittsburgh, PA, 1996), in press.Google Scholar
8.Fortmann, C. and Shimizu, I., J. Non-Crystalline Solids 198–200, 1146 (1996).Google Scholar
9.Layadi, N., Roca i Cabarrocas, P., Drevillon, B. and Solomon, I., Phys. Rev. B 52, 5136 (1995).Google Scholar
10.Hapke, P., Luysberg, M., Carius, R., Tzolov, M., Finger, F. and Wagner, H., Solid State Phenomena 51–52, 161 (1996).Google Scholar
11.Curtins, H., Wyrsch, N., Favre, M. and Shah, A., Plasma Chem. and Plasma Processing 7, 267 (1987).Google Scholar