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Preparation of Epitaxial BaTiO3 Thin Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition (Pe-Mocvd)

Published online by Cambridge University Press:  25 February 2011

C.S. Chern ,
J. Zhao ,
P. E. Norris ,
Y.Q. Li ,
B. Gallois ,
B. Kear ,
L. Luo ,
C. J. Maggiore  and
B. J. Wilkens
C.S. Chern
Affiliation:
EMCORE Corporation, 35 Elizabeth Ave., Somerset, N.J. 08873
J. Zhao
Affiliation:
EMCORE Corporation, 35 Elizabeth Ave., Somerset, N.J. 08873
P. E. Norris
Affiliation:
EMCORE Corporation, 35 Elizabeth Ave., Somerset, N.J. 08873
Y.Q. Li
Affiliation:
Stevens Institute of Technology, Hoboken, N.J. 07030
B. Gallois
Affiliation:
Stevens Institute of Technology, Hoboken, N.J. 07030
B. Kear
Affiliation:
Rutgers, The State University, Piscataway, N.J. 08854
L. Luo
Affiliation:
Los Alamos National Laboratory, N.M. 87545
C. J. Maggiore
Affiliation:
Los Alamos National Laboratory, N.M. 87545
B. J. Wilkens
Affiliation:
Bellcore, Red Bank, N.J. 07701
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Abstract

The plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) process has been successfully used to achieve high quality epitaxial growth of BaTiO3 thin films on (001) LaA103 and (001) NdGaO3 substrates at a substrate temperature of 680°C. The PEMOCVD system, which incorporates a 300-Watt microwave cavity, introduces excited species from an oxygen plasma to lower the required deposition temperature, as compared to thermal MOCVD growth of BaTiO3. X-ray diffraction (XRD) θ-20 scan patterns indicate that there are few randomly oriented grains and impurity phases in the epitaxial BaTiO3 films. Results of XRD ϕ-scans of the BaTiO3 (202) reflection show a modulation pattern of peaks every 90°, which demonstrates that the BaTiO3 thin films have no misorientation along the [100] and [010] directions of the substrates. An XRD ω rocking curve of the BaTiO3 (200) reflection had a narrow FWHM of 0.25°, indicating that the films have a high degree of preferred orientation of <100> perpendicular to the substrates. The high degree of epitaxial crystallinity is further confirmed by Rutherford Backscattering Spectrometry which gives a minimum yield of 7.5% and 11% for the films deposited on LaAIO3 and NdGaO3, respectively. Scanning electron micrographs show that these films have very smooth surface morphologies, which are desirable for device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 573
Copyright
Copyright © Materials Research Society 1992

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