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Preparation and Evaluation of Erbium Tris(Amide) Source Compounds for Erbium Doping of Semiconducting Materials

Published online by Cambridge University Press:  22 February 2011

William S. Rees Jr. ,
Uwe W. Lay  and
Anton C. Greenwald
William S. Rees Jr.
Affiliation:
Department of Chemistry and Materials Research and Technology Center The Florida State University, Tallahassee, FL 32306-3006
Uwe W. Lay
Affiliation:
Department of Chemistry and Materials Research and Technology Center The Florida State University, Tallahassee, FL 32306-3006
Anton C. Greenwald
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
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Abstract

Rare earth elements are important as dopants in the preparation of semiconductors, particularly for temperature-independent optical devices. The compound Er{N\Si(CH3)3]2}3 has been demonstrated to be a suitable source compound for erbium doping of semiconducting materials. Further investigations of this and related compounds have been carried out. New compounds have been characterized by 1H NMR, FTIR, TGA and elemental analysis techniques. Vapor pressures and decomposition profiles have been examined for these compounds.

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References

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