Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-28T23:27:39.840Z Has data issue: false hasContentIssue false
  • English
  • Français

Prediction of Silicide Formation Sequence from the Principle of the Largest Free Energy Degradation Rate

Published online by Cambridge University Press:  21 February 2011

Lin Zhang  and
Douglas G. Ivey
Lin Zhang
Affiliation:
Department of Mining, Metallurgical, and Petroleum EngineeringUniversity of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Douglas G. Ivey
Affiliation:
Department of Mining, Metallurgical, and Petroleum EngineeringUniversity of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Get access

Abstract

Recently, a generalized kinetic model for silicide formation has been developed and a principle of the largest free energy degradation rate (largest FEDR) has been proposed. Free energy change rate as a function of diffusion flux has been derived from the kinetic model so that the principle can be justified not only for first phase formation but also for the subsequent processes. Silicide formation sequence predictions, from the model and the FEDR principle, for 15 metal-Si systems have shown very good agreement with the experimental results reported in the literature. In this paper, a brief introduction to the model and the principle is given, followed by examples of the predictions for several metal-Si systems and comparison with experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 299
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Walser, R. M. and Bené, R. W., Appl. Phys. Lett. 28, 624 (1976).CrossRefGoogle Scholar
2. Bené, R. W., J. Appl. Phys. 61, 1826 (1987).CrossRefGoogle Scholar
3. Tu, K. N., Mayer, J.W. and Feldman, L. C., Chap. 10, in Electronic Thin Film Science For Electrical Engineeis and Materials Scientists (Macmillan Publishing Company, New York, 1992).Google Scholar
4. Zhang, Lin and Ivey, Douglas G., J. Appl. Phys. 71, 4314 (1992).CrossRefGoogle Scholar
5. Zhang, Lin and Ivey, Douglas G., Mater. Res. Soc. Symp. Proc. 260, 257 (1992).CrossRefGoogle Scholar
6. Zhang, Lin and Ivey, Douglas G., “Principle of Largest Free Energy Degradation Rate for Silicide Formation”, submitted to Thin Solid Films for publication, March, 1993.Google Scholar
7. Zhang, Lin and Ivey, Douglas G., “Semiquantitative Reaction Process Plots for Silicide Formation”, submitted to Thin Solid Films for publication, December, 1992.Google Scholar
8. Barbour, J. C., Mayer, J. W., and Zheng, L. R., Inst. Phys. Conf. Ser. 76 (5), 163 (1985).Google Scholar