Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-09T21:02:56.918Z Has data issue: false hasContentIssue false
  • English
  • Français

Prediction and Prevention of Stress Migration and Electromigration Damage in Passivated Lines

Published online by Cambridge University Press:  15 February 2011

P. Bergesen ,
M. A. Korhonen  and
C.-Y. Li
P. Bergesen
Affiliation:
Department of Materials Science & EngineeringCornell University, Ithaca, NY 14853
M. A. Korhonen
Affiliation:
Department of Materials Science & EngineeringCornell University, Ithaca, NY 14853
C.-Y. Li
Affiliation:
Department of Materials Science & EngineeringCornell University, Ithaca, NY 14853
Get access

Abstract

Based on recent theoretical progress we discuss current and potential new remedies for thermal stress and electromigration induced damage and failure in microelectronic interconnects. We present a new idea involving the patterning of alternately adhering and non-adhering interfaces between metal and surroundings, and briefly discuss the potential for predicting failure and/or extrapolating accelerated test results to service conditions and into the so-called ‘six-sigma’ range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 27
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Proc. Ist Int. Workshop on Stress Induced Phenomena in Metallizations (eds. Li, C.-Y., Totta, P., and Ho, P., AIP Conf. Proc., in press)Google Scholar
2 Sullivan, T. D., Appl. Phys. Lett. 55 (1989) 2399 Google Scholar
3. Korhonen, M. A., Paszkiet, C. A., and Li, C. -Y., J. Appl. Phys. 69 (1991) 8083 CrossRefGoogle Scholar
4. Korhonen, M. A., LaFontaine, W. R., Bergesen, P., and Li, C.-Y., J. Appl. Phys. 70(1991) 6774 CrossRefGoogle Scholar
5 Børgesen, P., Korhonen, M. A., and Li, C. -Y., accepted for publication in Thin Solid FilmsGoogle Scholar
6. Yue, J. T., Funsten, W. P., and Taylor, R. V., 23rd Annual Proceedings of Reliability Physics (IEEE, New York, 1985) 126Google Scholar
7. Børgesen, P., Korhonen, M. A., Basa, C., LaFontaine, W. R., Land, B., and Li, C.-Y., Mat. Res. Soc. Symp. Proc. 225 (1991)143 CrossRefGoogle Scholar
8. Ryan, J. G., Riendeau, J. B., Shore, S. E., Slusser, G. J., Beyar, D. C., Boulding, D. P., and Sullivan, T. D., J. Vac. Sci. Technol. A8 (1990) 1474 Google Scholar
9. Greenebaum, B., Sauter, A. I., Flinn, P. A., and Nix, W. D., Appl. Phys. Lett. 58 (1991) 1845 Google Scholar
10. Korhonen, M. A., Børgesen, P., Paszkiet, C. A., Lee, J. K., and Li, C.-Y., Mat. Res. Soc. Symp. Proc. 225 (1991) 155 CrossRefGoogle Scholar
11. Sullivan, T. D., Miller, L., and Endicott, G., in ref. [1]Google Scholar
12. Totta, P. A., in ref. [1]Google Scholar
13. Brown, D. D., Børgesen, P., Lilienfeld, D. A., Korhonen, M. A., and Li, C.-Y., Mat. Res. Soc. Symp. Proc. 239 (1992)Google Scholar
14. Ho, P. S., J. Appl. Phys. 41 (1970) 64 Google Scholar
15. Børgesen, P., Korhonen, M. A., Brown, D. D., and Li, C.-Y., ref. [1]Google Scholar
16. Li, C. -Y., Børgesen, P., and Sullivan, T. D., Appl. Phys. Lett. 59 (1991) 1464 Google Scholar
17. Børgesen, P., Korhonen, M. A., Sullivan, T. D., Brown, D. D., and Li, C.-Y., Mat. Res. Soc. Symp. Proc. 239 (1992)Google Scholar
18. Flinn, P. A., ref. [1]Google Scholar
19. Lloyd, J. R., Thin Solid Films 91 (1982) 175 Google Scholar
20. Ohmi, T. and Tsubouchi, K., Solid State Technol. 35, No.4 (1992) 47 Google Scholar
21. Levine, E. and Henry, B., in ref. [1]Google Scholar
22. Lloyd, J. R. and Kitchin, J., J. Appl. Phys. 69 (1991) 2117 Google Scholar