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Power Density Effects in the Physical and Chemical Properties of Sputiered Diamond-Like Carbon thin Films

Published online by Cambridge University Press:  21 February 2011

N.-H. Cho ,
K.M. Krishnan ,
D.K. Veirs ,
M.D. Rubin ,
C.B. Hopper ,
B. Bhushan  and
D.B. Bogy
N.-H. Cho
Affiliation:
Lawrence Berkeley Laboratory, One Cyclotron Rd., University of California, Berkeley, CA 94720
K.M. Krishnan
Affiliation:
Lawrence Berkeley Laboratory, One Cyclotron Rd., University of California, Berkeley, CA 94720
D.K. Veirs
Affiliation:
Lawrence Berkeley Laboratory, One Cyclotron Rd., University of California, Berkeley, CA 94720
M.D. Rubin
Affiliation:
Lawrence Berkeley Laboratory, One Cyclotron Rd., University of California, Berkeley, CA 94720
C.B. Hopper
Affiliation:
Lawrence Berkeley Laboratory, One Cyclotron Rd., University of California, Berkeley, CA 94720
B. Bhushan
Affiliation:
Lawrence Berkeley Laboratory, One Cyclotron Rd., University of California, Berkeley, CA 94720
D.B. Bogy
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720
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Abstract

Thin films of diamond-like amorphous carbon were prepared by dc magnetron sputtering. A systematic variation in the physical properties of the films (mass density and electrical resistivity) was found as a function of sputtering power density. Chemical bonding and microstructure of the carbon thin films were investigated using electron energy loss spectroscopy (EELS) and Raman spectroscopy. Films grown at a lower power density were found to have more sp3 -bonded atomic sites and larger graphite microcrystals than films produced at higher sputtering power densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 309
Copyright
Copyright © Materials Research Society 1990

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