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Possible shallowing of nitrogen donors in diamond

Published online by Cambridge University Press:  01 February 2011

Takehide Miyazaki  and
Tsuyoshi Uda
Takehide Miyazaki
Affiliation:
Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukba Central 4, Higashi 1-1-1, Tsukuba 305-8568, japan
Tsuyoshi Uda
Affiliation:
Joint Research Centeral for Atom Technology, Ångstrom Technology Partership, AISTT Tskuba Central 4, Higashi 1-1-1, Tsukuba 305-8568, Japan
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Abstract

Among many doping issues of diamond semiconductors, establishment of a shallow n-type impurity is a very important and yet challenging subject. Although both nitrogen (N) and hydrogen (H) are omnipresent impurities in diamond, they create only deep half-filled states in the energy gap. In this study, we present a theoretical proposal of a mechanism that makes N donors in diamond as shallow as possible. A complex of two adjacent substitutional N atoms with H sitting between the N atoms, an N-H-N defect, has a donor level approximately 1 eV shallower than of an isolated substitutional N defect.

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