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Positive Charge in Silicon Dioxide Due to High Electric Field FN Injection

Published online by Cambridge University Press:  15 February 2011

X. Gao ,
S. Yee  and
H. Mollenkopf
X. Gao
Affiliation:
Material Characterization Laboratory, SEH America, Inc., 4111 NE 112th Ave., Vancouver, WA 98682
S. Yee
Affiliation:
Department of Electrical Engineering, FT-10, University of Washington, Seattle, WA 98195
H. Mollenkopf
Affiliation:
Material Characterization Laboratory, SEH America, Inc., 4111 NE 112th Ave., Vancouver, WA 98682
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Abstract

Electric fields with different intensities and polarities in the range corresponding to the Fowler-Nordheim (FN) tunneling injections were applied on the MOS structures to examine the generation behaviors of the positive oxide charges. The concentration changes of the field-induced positive oxide charges with the injected electron numbers were measured and a linear relation between the saturated density of the positive oxide charge and the average intensity of the oxide electric field was obtained. The experimental results show that the amount of the field-induced positive oxide charge only depends on the intensity but not on the polarity of the oxide electric field. There was a threshold value of the average oxide electric field below which no positive charge could be generated; and this implies that the generation mechanism of the positive oxide charge due to high electric field can be different from that due to low electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 249
Copyright
Copyright © Materials Research Society 1992

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References

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