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Porous SiC – Prospective Applications (Invited)

Published online by Cambridge University Press:  11 February 2011

Marina Mynbaeva
Marina Mynbaeva*
Affiliation:
Ioffe Physico-Technical Institute, Polytechnicheskaya, 26, St.-Petersburg 194021 RUSSIA Crystal Growth Research Center, Ligovskii, 29, r.12H, St.-Petersburg 193036 RUSSIA
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Abstract

Possible applications for porous SiC (PSC) are addressed and related innovative aspects discussed. The formation and properties of PSC itself are considered first, since they define the area where PSC can be used. Then epitaxial growth on PSC substrates is reviewed in detail, with the emphasis on the chemical vapor deposition (CVD) technique. Next, new applications featuring the in-diffusion of V and Si into PSC for obtaining semi-insulating material and autodoping of GaN epitaxial layers from PSC substrates are presented.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K6.6
Copyright
Copyright © Materials Research Society 2003

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References

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