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Polycrystalline Silicon Single Electron Island by Excimer Laser Irradiation on a-Si Film

Published online by Cambridge University Press:  10 February 2011

C-M Park ,
J-H Jeon ,
M-S Lim ,
J-S Yoo  and
M-K Han
C-M Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
J-H Jeon
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
M-S Lim
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
J-S Yoo
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
M-K Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
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Abstract

We propose a novel fabrication method for a room temperature operating single-electron memory using the size and location controlled poly-Si island by lithographic technique and excimer laser annealing.

We have patterned tip shaped excimer laser windows and irradiated laser energy through windows for crystallizing amorphous silicon. As a result of laser energy, the poly-Si grains are growing from patterned window side so that the fine grain and isolated large poly-Si quantum dot are inherently formed by well-known ACSLG regime. The oxidation was then performed by RTP at 950 °C for 30 seconds in order to isolate quantum island and fine poly-Si grains for quantum dot. The peaks of the poly-oxide along the poly-Si grain boundaries were lowered during that oxidation and isolated the poly-Si grains and made oxide barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 981
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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