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Polarized Electroabsorption and Carrier Mobilities in Amorphous Silicon Alloys

Published online by Cambridge University Press:  16 February 2011

Y. Tsutsumi ,
H. Okamoto ,
K. Hattori  and
Y. Hamakawa
Y. Tsutsumi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Akashi, Hyogo 674, Japan
H. Okamoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Hattori
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Y. Hamakawa
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

We report on the free carrier Mobilities Measured by polarized electroabsorption Method. The result shows that the electron mobility reaches about 11.2cm2/Vs for device quality undoped a-Si:H, while the hole mobility is about 20% of the electron Mobility. Alloying with carbon leads to a continuous reduction of Mobility, with the largest drop (15%) for a carbon concentration of about 10 at.%, this being in sharp contrast to a less-pronounced effect by germanium alloying.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 343
Copyright
Copyright © Materials Research Society 1994

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