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Point defects in thin HfAlOx films probed by monoenergetic positron beams

Published online by Cambridge University Press:  01 February 2011

Akira Uedono ,
Riichiro Mitsuhashi ,
Atsushi Horiuchi ,
Kazuyoshi Torii ,
Kikuo Yamabe ,
Keisaku Yamada ,
Ryouichi Suzuki ,
Toshiyuki Ohdaira  and
Tomohisa Mikado
Akira Uedono
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305–8573, Japan
Riichiro Mitsuhashi
Affiliation:
Semiconductor Leading Edge Technologies, Inc, 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, Japan
Atsushi Horiuchi
Affiliation:
Semiconductor Leading Edge Technologies, Inc, 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, Japan
Kazuyoshi Torii
Affiliation:
Semiconductor Leading Edge Technologies, Inc, 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, Japan
Kikuo Yamabe
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305–8573, Japan
Keisaku Yamada
Affiliation:
Nano Technology Research Laboratory, Waseda University, 513, Waseda-Tsurumaki, Shinjuku, Tokyo, Japan
Ryouichi Suzuki
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba Central-2, 1–1–1, Umezono, Tsukuba, Ibaraki 305–8568, Japan
Toshiyuki Ohdaira
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba Central-2, 1–1–1, Umezono, Tsukuba, Ibaraki 305–8568, Japan
Tomohisa Mikado
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba Central-2, 1–1–1, Umezono, Tsukuba, Ibaraki 305–8568, Japan
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Abstract

Thin HfAlOx films grown on SiON(0.9 nm)/Si by atomic layer deposition technique were characterized by using monoenergetic positron beams. The lifetimes of positrons in the HfAlOx film after post-deposition annealing (PDA) ranged between 412–403 ps. Since these lifetimes were longer than the lifetime of positrons trapped by point defects in metal oxides, such as LaCoO3, PbTiO3, and BaTiO3, the positrons in HfAlOx films were considered to annihilate from the trapped state by open spaces which exist intrinsically in their amorphous structure. The line-shape parameter S of the Doppler broadening spectrum corresponding to the annihilation of positrons in HfAlOx films decreased by PDA, and the S value decreased with increasing an O2-content in an atmosphere during PDA (0.004–1%). The observed behavior of the S value was attributed to the shrinkage of the open spaces due to the change in the matrix structure of HfAlOx. After P+- and B+-implantation into poly-Si films grown on the HfAlOx films, the diffusion of positrons in the Si substrates toward the HfAlOx film was suppressed. This fact was attributed to positive charges introduced near the HfAlOx films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E1.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] The International Technology Roadmap for Semiconductors, 2001 ed. (International Sematch, Austin TX, 2001).Google Scholar
[2] Wilk, G. D., Wallace, R. M., and Anthony, J. M., J. Appl. Phys. 89, 5243 (2001).Google Scholar
[3] Neumayer, D. A. and Cartier, E., J. Appl. Phys. 90, 1801 (2001).Google Scholar
[4] Krause-Rehberg, R. and Leipner, H. S., Positron Annihilation in Semiconductors, Solid-State Sciences 127 (Springer-Verlag, Berlin, 1999).Google Scholar
[5] Zhi, Y. and Chen, A., J. Phys. Condens. Matter 5, 1877 (1993).Google Scholar
[6] Tang, C. Q., Phys. Rev. B 50, 9774 (1994).Google Scholar
[7] Keeble, D. J., Nielsen, B., Krishnan, A., Lynn, K. G., Madhukar, S., Ramesh, R., and Yong, C. F., Appl. Phys. Lett 73, 318 (1998).Google Scholar
[8] Friessnegg, T., Madhukar, S., Nielsen, B., Moodenbaugh, A. R., Aggarwal, S., Keeble, D. J., Poindexter, E. H., Mascher, P., and Ramesh, R., Phys. Rev. B 59, 13365 (1999).Google Scholar
[9] Massoud, A. M., Krause-Rehberg, R., Langhammer, H. T., Gebauer, J., and Mohsen, M., Mater. Sci. Forum 363–365, 144 (2001).Google Scholar
[10] Uedono, A., Shimayama, K., Kiyohara, M., Chen, Z. Q., and Yamabe, K., Ohdaira, T., Suzuki, R., and Mikado, T., J. Appl. Phys. 91, 5307 (2002).Google Scholar
[11] Uedono, A., Shimoyama, K., Kiyohara, M., Chen, Z. Q., and Yamabe, K., J. Appl. Phys. 92, 2697 (2002).Google Scholar
[12] Ghosh, V. J. and Nielsen, B., Phys. Rev. B 61, 207 (2000).Google Scholar
[13] Kawahara, T., Torii, K., Mitsuhashi, R., Mutoh, A., Horiuchi, A., Ito, H., and Kitajima, H., Extended Abstracts of Int. Workshop on Gate Insulator 2003, p. 32.Google Scholar
[14] van Veen, A., Schut, H., de Vries, J., Hakvoort, R.A., and Ijpma, M.R., AIP Conf. Proc. 218, 171 (1990).Google Scholar
[15] Suzuki, R., Ohdaira, T., and Mikado, T., Radiat. Phys. & Chem. 58, 603 (2000).Google Scholar
[16] Kirkegaard, P., Eldrup, M., Mogensen, O.E., and Pedersen, N.J., Comput. Phys. Commun. 23, 307 (1981).Google Scholar
[17] Uedono, A., Kitano, T., Watanabe, M., Moriya, T., Kawano, T., Tanigawa, S., Suzuki, R., Ohdaira, T., and Mikado, T., Jpn. J. Appl. Phys 35, 2000 (1996).Google Scholar