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Piiotoelectronic Proiioerties Of Amorpiious Silicon/Silicon Oxide Heterostructures

Published online by Cambridge University Press:  28 February 2011

F. Carasco ,
J. Mort ,
F. Jansen  and
S. Grammatica
F. Carasco
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
J. Mort
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
F. Jansen
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
S. Grammatica
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
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Abstract

A glow-discharge deposited a-Si:H/insulator heterostructu re has been characterized by a range of measurements including optical absorption, internal photoemission, xerographic discharge and spectral dependence of photoconductivity. Efficient injection of photocarriers from a-Si:H into, and transport through, films of SiOx:N:H up to 10 μm thick has been achieved. Unlike the conventional thermal oxide on Si, no significant energy barrier to injection is fotInd in the plasma deposited heterostructure. The use of the structure as a potential xerographic device is demonstrated. A mobility lifetime product as high as 6 x 10-10 cm2/volt is found for electronsin the SiOx:N:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 111
Copyright
Copyright © Materials Research Society 1985

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