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Picosecond Laser-Induced Solid-Liquid Phase Transformations in Gallium Arsenide and Silicon

Published online by Cambridge University Press:  26 February 2011

B. Danielzik ,
P. Harten ,
K. Sokolowski-Tinten  and
D. von der Linde
B. Danielzik
Affiliation:
Institut für Laser- und Plasmaphysik, Universität-GHS-Essen, 4300 Essen 1, Federal Republic of Germany
P. Harten
Affiliation:
Institut für Laser- und Plasmaphysik, Universität-GHS-Essen, 4300 Essen 1, Federal Republic of Germany
K. Sokolowski-Tinten
Affiliation:
Institut für Laser- und Plasmaphysik, Universität-GHS-Essen, 4300 Essen 1, Federal Republic of Germany
D. von der Linde
Affiliation:
Institut für Laser- und Plasmaphysik, Universität-GHS-Essen, 4300 Essen 1, Federal Republic of Germany
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Abstract

Melt-in velocities of picosecond laser-heated Si and GaAs were obtained from optical reflectivity measurements. We observed a velocity increase from about 100 m/s near the melting threshold to many hundred m/s at higher fIuences. With a new technique for picosecond time-resolved observation of atomic desorption we have been able to resolve the evaporation of Ga.

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References

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