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Picosecond Laser Induced Melting: The Dielectric Function of Molten Silicon and Superheating in the Liquid Phase

Published online by Cambridge University Press:  26 February 2011

P. M. Fauchet  and
K. D. Li
P. M. Fauchet
Affiliation:
Princeton Laboratory for Ultrafast Spectroscopy (PLUS), Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
K. D. Li
Affiliation:
Princeton Laboratory for Ultrafast Spectroscopy (PLUS), Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The complex dielectric function of molten silicon produced after picosecond illumination is found to be well described by a Drude model from 1.1 eV to 3.5 eV. Close to the melting temperature, we obtain ωp = 2.50 1016rad/s and τ = 212 10−18s. Transiently, the liquid temperature can exceed the melting temperature or even the boiling temperature Tb. We observe this transient heating and model it with a relatively simple computer code which includes superheating of the liquid above Tb. These measurements are possible thanks to a novel pump and probe technique.

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References

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