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Picosecond Decay Dynamics in Porous Silicon

Published online by Cambridge University Press:  28 February 2011

T. Matsumoto ,
T. Futagi ,
H. Mimura  and
Y. Kanemitsu
T. Matsumoto
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5 – 10 – 1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
T. Futagi
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5 – 10 – 1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
H. Mimura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5 – 10 – 1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Abstract

Picosecond decay dynamics of luminescent porous silicon has been studied using the second harmonics (SH) of a cw modelocked YLF laser and a synchroscan streak camera. Picosecond luminescence decay shows nonexponential behavior that becomes large with decreasing emission energy. When increasing hydrogen termination on the surface of a Si microcrystal occurs, this picosecond luminescence decay becomes faster. Our experimental results indicate that there are two luminescent states in porous Si : a weak luminescent quantum confinement state and a strong luminescent surface localized state.

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References

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