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Photoreflectance Characterization of Etch-Induced Damage in Dry Etched GaAs

Published online by Cambridge University Press:  22 February 2011

O.J. Glembocki ,
J.A. Tuchman ,
K.K. Ko ,
S.W. Pang ,
A. Giordana  and
C.E. Stutz
O.J. Glembocki
Affiliation:
Naval Research Laboratory, Code 6864, Washington, DC 20375
J.A. Tuchman
Affiliation:
Naval Research Laboratory, Code 6864, Washington, DC 20375
K.K. Ko
Affiliation:
The University of Michigan, Electrical Engineering Department, Ann Arbor, MI 48109
S.W. Pang
Affiliation:
The University of Michigan, Electrical Engineering Department, Ann Arbor, MI 48109
A. Giordana
Affiliation:
Naval Research Laboratory, Code 6864, Washington, DC 20375
C.E. Stutz
Affiliation:
Wright Patterson Laboratories, Dayton, OH
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Abstract

Photoreflectance has been used to characterize the etch-induced damage in GaAs processed in an Ar/Cl2 plasma generated by an electron-cyclotron resonance (ECR) source. We show that the damage is localized to the surface and that it is most influenced by the RF power, with little effect from the microwave power. The Fermi-level is observed to be unchanged in n-GaAs and remains near midgap, while for p-GaAs, the Fermi level shifts from near the valence band to midgap. Etch-induced anisite defects are proposed as a possible source of the damage.

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