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Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

Published online by Cambridge University Press:  21 February 2011

P. John ,
I.M. Odeh ,
A. Qayyum  and
J.I.B. Wilson
P. John
Affiliation:
Departments of Physics and Chemistry, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
I.M. Odeh
Affiliation:
Departments of Physics and Chemistry, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
A. Qayyum
Affiliation:
Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
J.I.B. Wilson
Affiliation:
Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
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Abstract

Hydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 181
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Tawada, Y., Ikamoto, H. and Hamakawa, Y., Appl. Phys. Lett. 39, 237(1981).Google Scholar
2. Tafto, J. and Kampas, F.J., Appl. Phys. Lett. 46, 949(1985).Google Scholar
3. Katayama, Y., Usami, K. and Shimada, T., Phil. Mag. B 43, 283(1981)Google Scholar
4. Hicks, S.E., Fitzgerald, A.G., Baker, S.H. and Dines, T.J., Phil. Mag. B submitted for publication.Google Scholar
5. John, P., Qayyum, A. and Wilson, J.I.B., Elect. Lett. 25, 930(1989)Google Scholar
6. John, P., Odeh, I.M., Qayyum, A. and Wilson, J.I.B., in preparation.Google Scholar
7. Wilson, J.I.B., Qayyum, A., Al-Sabbagh, S., Jubber, M. and John, P. Proc. Int. Conf. Amorph. and Liquid Semiconductors, N. Carolina 1989.Google Scholar
8. Qayyum, A., Ph.D. thesis, Heriot-Watt University, Edinburgh 1989.Google Scholar