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Photoluminescence Study of Defects in GaN Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

Michael A. Reshchikov ,
Manhong H. Zhang ,
Jie Cui ,
Paolo Visconti ,
Feng Yun  and
Hadis Morkoç
Michael A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
Manhong H. Zhang
Affiliation:
Also with Istituto per lo Studio di Nuovi Materiali per l' Elettronica, CNR, 73100 Lecce, Italy
Jie Cui
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
Paolo Visconti
Affiliation:
Also with Istituto per lo Studio di Nuovi Materiali per l' Elettronica, CNR, 73100 Lecce, Italy
Feng Yun
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
Hadis Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
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Abstract

Defect related photoluminescence (PL) in unintentionally doped GaN layers grown by molecular beam epitaxy (MBE) was studied. Under certain growth conditions, we observed new defect-related bands: a red band with a maximum at about 1.88 eV and a green band with a maximum at about 2.37 eV. The quenching of these bands with increasing temperature took place with an activation energy of about 120-140 meV at temperatures above 100 K. Moreover, the red band exhibited an increase of PL intensity with an activation energy of 1.2 meV in the range of 10-60 K. The observed behavior is explained by invoking a configuration coordinate model and that we speculate the defects to be partially nonradiative and related to Ga atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Stoneham, A. M., “Theory of Defects in Solids”, Clarendon Press, Oxford (1975).Google Scholar
2. Ogino, T. and Aoki, M., Jap. J. Appl. Phys. 19, 2395 (1980).Google Scholar
3. Reshchikov, M. A., Shahedipour, F., Korotkov, R. Y., Ulmer, M. P., and Wessels, B. W., Physica B 273–274, 103 (1999).Google Scholar
4. Reshchikov, M. A., Shahedipour, F., Korotkov, R. Y., Ulmer, M. P., and Wessels, B. W., J. Appl. Phys. 87, 3351 (2000).Google Scholar
5. Reynolds, D. C., Look, D. C., Jogai, B., and Morkoç, H., Sol. St. Comm. 101, 643 (1997).Google Scholar
6. Shinoya, S., Koda, T., Era, K., and Fujiwara, H., J. Phys. Soc. Japan 19, 1157 (1964).Google Scholar
7.More specifically, the mode is quasi-local if its energy falls to the acoustic or optic band of the lattice phonons and it is true local if its energy falls to the frequency gap.Google Scholar
8. Reshchikov, M. A., Yi, G.-C., and Wessels, B. W., Phys. Rev. B 59, 13176 (1999).Google Scholar
9.The quantum efficiency has been estimated as a ratio of the integrated PL intensity to the intensity of the incident laser light with correction for the PL registration optics and refractive index of GaN.Google Scholar
10. Hayes, W. and Stoneham, A. M., “Defects and Defect Processes in Nonmetallic Solids”, A Wiley-Interscience Publ., New-York (1985), pp. 202–209.Google Scholar
11. Boguslawski, P., Phys. Rev. B 51, 17255 (1995).Google Scholar
12. Gorczyca, I., Svane, A., and Christensen, N. E., Phys. Rev. B 60, 8147 (1999).Google Scholar