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Photoluminescence Spectra of C+-Implanted GaAs: Experimental Verification on Amphoteric Features of Carbon Impurities in GaAs

Published online by Cambridge University Press:  26 February 2011

Yunosuke Makita ,
Shigeru Shigetomi ,
Masahiko Mori ,
Nobukazu Ohnishi ,
Paul Phelan  and
Tokue Matsumori
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki-ken 305, Japan
Shigeru Shigetomi
Affiliation:
Department of Physics, Kurume University, 1635 Mii-machi, Kurume-shi, Fukuoka-ken 830, Japan
Masahiko Mori
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki-ken 305, Japan
Nobukazu Ohnishi
Affiliation:
Institute of Fundamental Analysis Inc.,Ltd., 3-24-3 Yoyogi, Shibuya-ku, Tokyo 151, Japan
Paul Phelan
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki-ken 305, Japan
Tokue Matsumori
Affiliation:
Department of Electronics, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa-ken 259-12, Japan
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Abstract

C+ ion-implantation was carried out for extremely pure GaAs gown by moleplar Ieam epitaxy. The dose was very widely varied from 1×1015 to 1×1020 cm−3. Photoluminescence and Raman scattering measurements were performed at 2 K and room temperature, respectively, both as functions of dose and annealing temperature. The results revealed that for a dose less than 5×1017 cm−3, where the dominant damages are point defects, annealing at 200°C is sufficient to attain a damage-free lattice. When the dose is above that value, where the principal damage is a highly disordered lattice, annealing, at least above 550°C, is required. Photoluminescence spectra showed that the well-defined near-band-gap emission, [g-g], (exclusively inherent to acceptors), was a dominant emission in the above mentioned low dose region, but was strongly suppressed in the higher region. These observations indicate that ion-implanted C atoms in GaAs behave as amphoteric impurities when the dose exceeds a critical value, of around 5×1017 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 331
Copyright
Copyright © Materials Research Society 1988

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References

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