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Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

Joachim Krüger ,
Christian Kisielowski ,
Ralf Klockenbrink ,
G. S. Sudhir ,
Yihwan Kim ,
Michael Rubin  and
Eicke R. Weber
Joachim Krüger
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Christian Kisielowski
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Ralf Klockenbrink
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
G. S. Sudhir
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Yihwan Kim
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Michael Rubin
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Eicke R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
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Abstract

The paper describes the influence of strain on the optical quality of GaN films grown by MBE on c-plane sapphire. The photoluminescence (PL) line width of the donor-bound exciton can be designed to be as narrow as 1.2 meV by actively utilizing hydrostatic and biaxial stress components. Unstrained p-type Mg-doped GaN films exhibit comparably narrow near band edge transitions. A sharp PL line at 3.261 eV in some of our films is identified as the donor bound exciton of the cubic phase. The formation of these cubic inclusions can be stimulated by a high III/V flux ratio at the growth temperature of T = 725°C. The PL spectrum of an InGaN multi quantum well structure is significantly broadened compared with the spectra of single quantum well structures. Combination of PL and TEM indicates that this effect relates to a progressive increase of the quantum well widths and their spacing along the growth direction. It is argued that strain affects the growth rate and the incorporation of Indium into the quantum well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 299
Copyright
Copyright © Materials Research Society 1997

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References

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