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Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template

Published online by Cambridge University Press:  01 February 2011

M. A. Reshchikov ,
F. Yun ,
D. Huang ,
L. He ,
H. Morkoç ,
S. S. Park  and
K. Y. Lee
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
F. Yun
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
D. Huang
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
L. He
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
H. Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
S. S. Park
Affiliation:
Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, Korea 440-600
K. Y. Lee
Affiliation:
Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, Korea 440-600
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Abstract

We studied photoluminescence (PL) of GaN layers grown by molecular beam epitaxy on freestanding high-quality GaN templates. The layers with thickness of ∼ 1 νm were grown under Ga-rich conditions using radio-frequency plasma as a nitrogen source. The PL spectra from both the epilayer and the substrate contain a plethora of very sharp peaks related to excitonic transitions. Through the analysis of the excitonic part of the spectra, we have identified two shallow donors with the binding energies of 28.8 and 32.6 meV, attributed to SiGa and ON, respectively. The PL spectra involved also emissions due to shallow donor-acceptor pair transitions with the main peak at 3.26 eV and a broad band peaking at ∼2.5 - 2.6 eV (green band). The green bands in the GaN substrate and GaN overgrown layer have different energy positions invoking the suggestion that they must have their genesis in different defect centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K1.4
Copyright
Copyright © Materials Research Society 2002

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