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Photoluminescence of Extended Defects in Silicon-on-Insulator Formed by Implantation of Oxygen

Published online by Cambridge University Press:  26 February 2011

Y. H. Qian ,
J. H. Evans ,
L. F. Giles ,
A. Nejim  and
P. L. F. Hemment
Y. H. Qian
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, UMIST, PO Box 88, Manchester, M60 1QD, UK
J. H. Evans
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering and Electronics, UMIST, PO Box 88, Manchester, M60 1QD, UK
L. F. Giles
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
A. Nejim
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
P. L. F. Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
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Abstract

PL and TEM have been carried out on SIMOX structures before and after thinning the silicon overlayer by a process of sacrificial oxidation. The implantation and high temperature annealing schedules involved in fabricating SIMOX material result in threading dislocations and stacking fault tetrahedra and pyramidals in the silicon overlayer. The optical activity of these extended defects is found to be low. However, after the sacrificial oxidation, strong dislocation related luminescence is observed, which is attributed to the presence of oxidation-induced stacking faults now present in the overlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 629
Copyright
Copyright © Materials Research Society 1995

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References

1. Kolbesen, B. O., Bergholz, W., Cerva, H., Gelsdorf, F., Wendt, H. and Soth, G., Inst. Phys. Conf. Ser. 104, 421 (1990)Google Scholar
2. Giles, L. F., Marsh, C. D., Nejim, A., Hemmentand, P. L. F. Booker, G. R., Nuclear Instrument And Method in Physics B84, 242 (1994)Google Scholar
3. Coene, W., Bender, H. and Amelinckx, S., Philos. Mag. A52, 369 (1985)Google Scholar
4. Omling, P., Weber, E. R., Montelius, L., Alexander, H. and Michel, J., Phys. Rev. B32, 6571 (1985)Google Scholar
5. Lahiji, G. R., Peaker, A. R. and Hamilton, B., Inst. Phys. Conf. Ser. 104, 239 (1990)Google Scholar
6. Lightowlers, E. C., Higgs, V., Gregson, M. J., Davies, G., Davey, S. T., Gibbings, C. J., Tupper, C. G., Schaffler, F. Kasper, A., Thin Solid Films 183, 235 (1989)Google Scholar
7. Giles, L. F., Nejim, A. and Hemment, P. L. F., Mat. Chem. and Phys. 35, 129 (1993)Google Scholar
8. Evans, J. H., Kaniewski, J., Kaniewkaand, M. Rimmer, J. S., Semicond. Sci. Technol. 7, A41 (1992)Google Scholar
9. Davis, G. E., Jones, K. S., and Prussin, S., MRS Sym. Proc. 107, 111 (1987)Google Scholar
10. Duncan, W. M., Chang, P.-H., Mao, B.-Y., and Chen, C.-E., Appl. Phys. Lett. 51, 773 (1987)Google Scholar
11. Margail, J., Lamure, J. M. and Papon, A. M., Mat. Sci. and Eng. B12, 27 (1993)Google Scholar
12. Park, J. C., Lee, J. D., Venables, D., Krause, S., and Roitman, P., MRS Sym. Proc. 279, 153 (1993)Google Scholar
13. Davidson, J. A., Evans, J. H. and Peaker, A. R., Mat. Sci. and Eng. B24, 167 (1994)Google Scholar