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Photoluminescence of Cu(In1-X, GaX)Se2 Epitaxial Thin Films Grown by MOVPE

Published online by Cambridge University Press:  01 February 2011

N. Rega ,
S. Siebentritt ,
J. Albert  and
M. Lux
N. Rega
Affiliation:
Steiner Hahn Meitner Institut Berlin GmbH, Glienickerstr. 100, D-14109 Berlin
S. Siebentritt
Affiliation:
Steiner Hahn Meitner Institut Berlin GmbH, Glienickerstr. 100, D-14109 Berlin
J. Albert
Affiliation:
Steiner Hahn Meitner Institut Berlin GmbH, Glienickerstr. 100, D-14109 Berlin
M. Lux
Affiliation:
Steiner Hahn Meitner Institut Berlin GmbH, Glienickerstr. 100, D-14109 Berlin
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Abstract

To study the intrinsic defect structure, detailed photoluminescence (PL) measurements of epitaxial Cu-rich Cu(In1-X, GaX)Se2 grown by metalorganic vapor phase epitaxy (MOVPE) were performed. Distinct emissions appear at an energy position 80-150meV below the bandgap. Excitation-power-dependent measurements showed blue shifts up to 18meV/decade for these emissions. The temperature dependent PL results in a defect energy for this emission of 50-80meV due to a free-to-bound (FB) transition. This indicates that the emissions of this material are controlled by fluctuating potentials due to high compensation or compositional inhomogeneity. The compositional inhomogeneity is detected by x-ray diffraction (XRD) and occurs especially for epitaxial layers grown at 570°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B5.2
Copyright
Copyright © Materials Research Society 2003

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