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Photoluminescence Excitation Spectroscopy (PLE) of Porous Silicon

Published online by Cambridge University Press:  15 February 2011

Lei Wang ,
M. T. Wilson ,
M. S. Goorsky  and
N. M. Haegel
Lei Wang
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, 5731 Boelter Hall, Los Angeles, CA 90024
M. T. Wilson
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, 5731 Boelter Hall, Los Angeles, CA 90024
M. S. Goorsky
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, 5731 Boelter Hall, Los Angeles, CA 90024
N. M. Haegel
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, 5731 Boelter Hall, Los Angeles, CA 90024
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Abstract

PLE spectroscopy was performed on samples of porous Si at temperatures of 300 and 4.2 K. PLE provides information about the absorption coefficient in the limit of optically thin samples and is an alternative method for determining absorption data on porous Si without removal of the substrate. The spectra obtained correspond closely to the relative changes in absorption coefficient for bulk Si between 2.0 and 3.5 eV, with a strong increase above 3.0 eV which is due to the direct bandgap transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 73
Copyright
Copyright © Materials Research Society 1992

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References

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