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Photoinduced Solid Phase Transformation in Vanadium Dioxide Films

Published online by Cambridge University Press:  26 February 2011

Sergiy Lysenko ,
Valentin Vikhnin ,
Armando Rua ,
Felix Fernandez  and
Huimin Liu
Sergiy Lysenko
Affiliation:
SLysenko@feynman.uprm.edu, University of Puerto Rico, Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico, 00681-9016, United States Minor Outlying Islands
Valentin Vikhnin
Affiliation:
vikhnin@uni-osnabrueck.de, University of Puerto Rico, Department of Physics, Puerto Rico
Armando Rua
Affiliation:
f_fernandez@feynman.uprm.edu, University of Puerto Rico, Department of Physics, Puerto Rico
Felix Fernandez
Affiliation:
f_fernandez@feynman.uprm.edu, University of Puerto Rico, Department of Physics, Puerto Rico
Huimin Liu
Affiliation:
hliu@uprm.edu, University of Puerto Rico, Department of Physics, Puerto Rico
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Abstract

Laser induced insulator-to-metal phase transition in VO2 thin films was explored using femtosecond optical pump-probe spectroscopy. The transient reflection and relaxation processes in VO2 were observed during phase transition on 10-11 - 10-9 temporal-scale. Optical generation of carriers in VO2 initiates extremely fast changes in reflectivity which is strongly dependent on pump fluence. Analysis of transient optical properties allows suggesting the excitonic-controlled mechanism responsible for the light-induced phase transition in VO2.

Keywords

metal-insulator transitionoxideoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 905: Symposium DD – Materials for Transparent Electronics , 2005 , 0905-DD05-12
Copyright
Copyright © Materials Research Society 2006

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References

1 Chen, S., Ma, H., Yi, X., Wang, H., Tao, X., Chen, M., Li, X., Ke, C., Infrared Physics & Technology 45, 239 (2004).Google Scholar
2 Balberb, I., Trokman, S., J. Appl. Phys. 4, 2111 (1975).Google Scholar
3 Fan, J.C.C., Fetterman, H.R., Bachner, F.J., Zavrasky, P.M., C.D.Parker, Appl. Phys. Lett. 30, 11 (1977).Google Scholar
4 Gal'perin, V. L., Khakhaev, I. A., Chudnovski, F. A., Shadrin, E. B., Zh.Tech.Phys. 43, 235 (1998).Google Scholar
5 Cavalleri, A., Dekorsy, Th., Chong, H. H. W., Kieffer, J. C., Schoenlein, R. W., Phys. Rev. B, 70, 161102 (2004).Google Scholar
6 Klimov, V.A., Timofeeva, I.O., Khanin, S.D., Shardin, E.B., Ilinskii, A.V., Silva-Andrade, F., Tech.Phys. 47, 1134 (2002).Google Scholar
7 Vikhnin, V.S., Lysenko, S., Rua, A., Fernandez, F., Liu, H.: J. of Physics (c) 21, 44 (2005); Solid State Comm.2005 (in press).Google Scholar
8 Paquet, D., Leroux-Hugon, P., Phys. Rev. B, 22, 5284 (1980).Google Scholar
9 Pollack, S. A., Chang, D. B., Chudnovky, F. A., Khakhaev, I. A., J. Appl. Phys. 78, 3592 (1995).Google Scholar
10 Poumellec, B., Marucco, J. F., Touzelin, B., Phys. Rev. B, 35, 2284 (1987).Google Scholar