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Photoelastic Imaging of Process Induced Defects in 300mm-Silicon Wafers

Published online by Cambridge University Press:  10 February 2011

H.D. Geiler ,
W. Kürner  and
O. Storbeck
H.D. Geiler
Affiliation:
JenaWave Engineering & Consulting, Konrad-Zuse-Str.5, D-07745 Jena, Germany
W. Kürner
Affiliation:
SEMICONDUCTOR300, P.O.B.10 04 46, D-01074 Dresden, Germany
O. Storbeck
Affiliation:
SEMICONDUCTOR300, P.O.B.10 04 46, D-01074 Dresden, Germany
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Abstract

Process induced crystal defects in silicon wafers can be detected by their stress fields. The nondestructive photoelasticity based on laser polarimetry is applied to visualize the stress fields of temperture gradient induced lattice defects like sliplines or extended defect areas around boat marks. The quantitative evaluation of the defects allows their characterization by a specific danger potential for further evolution causing upstream problems in IC manufacturing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 249
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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