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Photodefinable Metal Oxide Dielectrics: A Novel Method for Fabricating Low Cost RF Capacitive MEMS Switches

Published online by Cambridge University Press:  01 February 2011

Guoan Wang ,
Augustin Jeyakumar ,
John Papapolymerou  and
Clifford L. Henderson
Guoan Wang
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA 30332–0250
Augustin Jeyakumar
Affiliation:
School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive NW, Atlanta, GA 30332–0100
John Papapolymerou
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA 30332–0250
Clifford L. Henderson*
Affiliation:
School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive NW, Atlanta, GA 30332–0100
*
* E-mail: cliff.henderson@chbe.gatech.edu, Phone: (404)-385–0525
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Abstract

In this paper, a novel approach for fabricating low cost capacitive RF MEMS switches using directly photodefinable high dielectric constant metal oxides has been developed. In this approach, a radiation sensitive metal-organic precursor is deposited via spin coating and converted patternwise to a high dielectric constant metal oxide via ultraviolet exposure. The feasibility of this approach is demonstrated by fabricating bridge-type and cantilever-type switches with a nitride/metal-oxide/nitride dielectric film stack. These switches exhibited significantly higher isolation and load capacitances as compared to comparable switches fabricated using a simple silicon nitride dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 783: Symposium B – Materials, Intergration, and Packaging Issues for High-Frequency Devices , 2003 , B6.7
Copyright
Copyright © Materials Research Society 2004

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References

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