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Photoconductivity of Boron Doped A—SiN X:H

Published online by Cambridge University Press:  28 February 2011

H. Nojima ,
T. Hayakawa ,
E. Imada ,
Y. Kojima ,
S. Narikawa ,
T. Matsuyama  and
S. Ehara
H. Nojima
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri∼shi, Nara, JAPAN
T. Hayakawa
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri∼shi, Nara, JAPAN
E. Imada
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri∼shi, Nara, JAPAN
Y. Kojima
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri∼shi, Nara, JAPAN
S. Narikawa
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri∼shi, Nara, JAPAN
T. Matsuyama
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri∼shi, Nara, JAPAN
S. Ehara
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri∼shi, Nara, JAPAN
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Abstract

The photoconductivity of boron doped a—SiNx:H(x=O.07)has been studied by steady state secondary photocurrent, xerographic photodischarge, the time of flight measurement, and ESR. The dominant carrier of the photocurrent in a—SiNx:H is found to be electron. The μτ product of the electron decreases with increasirg doping amount of boron, while that of the hole increases and becomes largerthan 10-8cm2/V. From these results it is found that the life time of the hole becomes longer with increasing the amount of doping boron. The intensity of the ESR signal due to the neutral dangling bonds decreases monotonically with doping boron, and this decrease of the neutral dangling bond density is considered to be due to not only change of the occupation statistics, but mainly to the chemical or electrical interaction between boron and nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 209
Copyright
Copyright © Materials Research Society 1985

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References

1) Kurata, H., Hirose, M. and Osaka, Y.: Jpn. J. Appl. Phys. 20(1981) L–811.Google Scholar
2) Kurata, H., Miyamoto, H., Hirose, M. and Osaka, Y.: Proc. 3rd PhotovoltaWC Science and Engineering Conf. in Japan, 1982, Jpn. J. Appl. Phys. 21 (1982) Suppl. 21-2 205.Google Scholar
3) Oda, S., Saito, Y., Shimizu, I. and Inoue, E.: Philos. Mag. B43 (1981) 1079.Google Scholar
4) Mort, J., Troup, A., Morgan, M., Grammatica, S., Knights, J. C., and Lujan, R.: Appl. Phys. Lett. 38(1981) 277.Google Scholar
5) Street, R. A.: Appl. Phys. Lett. 41(1982) 1060.Google Scholar
6) Street, R. A., Zesch, J. and Thompson, M. J.: Appl. Phys. Lett. 43(1983) 672.Google Scholar
7) Dersch, H., Stuke, J. and Beichler, J.: Phys. Stat. Sol. B105 (1981) 265.Google Scholar