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Photoconducting Properties of Ultraviolet Detectors Based on GaN and Al1-xGaxN Films Grown by ECR-MBE

Published online by Cambridge University Press:  10 February 2011

M. Misra ,
D. Korakakis ,
R. Singh ,
A. Sampath  and
T. D. Moustakas
M. Misra
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 44 Cummington Street, Boston, MA 02215.
D. Korakakis
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 44 Cummington Street, Boston, MA 02215.
R. Singh
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 44 Cummington Street, Boston, MA 02215.
A. Sampath
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 44 Cummington Street, Boston, MA 02215.
T. D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 44 Cummington Street, Boston, MA 02215.
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Abstract

GaN and All-xGaxN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10-109 ohm-cm and 10-3 -10-8 cm2/V respectively by changing the microwave power in the ECR discharge from 20-60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, we report for the first time, the detection of alpha particles using GaN detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 597
Copyright
Copyright © Materials Research Society 1997

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References

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