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Photoassisted Deposition of Silicon Dioxide from Silane and Nitrogen Dioxide

Published online by Cambridge University Press:  22 February 2011

Jeffrey Marks ,
Robert C. Bowman Jr  and
Ruby E. Robertson
Jeffrey Marks
Affiliation:
The Aerospace Corporation, Chemistry and Physics Laboratory, P.O. Box 92957, Los Angeles, CA 90009
Robert C. Bowman Jr
Affiliation:
The Aerospace Corporation, Chemistry and Physics Laboratory, P.O. Box 92957, Los Angeles, CA 90009
Ruby E. Robertson
Affiliation:
The Aerospace Corporation, Chemistry and Physics Laboratory, P.O. Box 92957, Los Angeles, CA 90009
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Abstract

Three new reactions for depositing silicon dioxide at low temperatures using vacuum ultraviolet and ultraviolet radiation to initiate a reaction between silane and nitrogen dioxide have been developed. The optical and electrical properties of these films are reported. The effect of ion implantation on the infrared spectra of oxides grown by vacuum ultraviolet irradiation is also presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 115
Copyright
Copyright © Materials Research Society 1988

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