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Photo- and Thermal Annealing-Induced Processes in Carbon Nanotube Transistors

Published online by Cambridge University Press:  01 February 2011

Moonsub Shim ,
Giles P. Siddons ,
Jae Kyeong Jeong  and
David Merchin
Moonsub Shim
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St. Urbana, IL 61801
Giles P. Siddons
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St. Urbana, IL 61801
Jae Kyeong Jeong
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St. Urbana, IL 61801
David Merchin
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St. Urbana, IL 61801
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Abstract

Photoinduced conductivity changes and effects of thermal annealing in carbon nanotube transistors have been examined. Low-intensity ultraviolet light significantly reduces the p-channel conductance while simultaneously increasing the n-channel conductance. A combination of optical absorption and electron transport measurements reveals that these changes occur without variations in dopant concentrations. Measurements with different metals reveal that UV induces oxygen desorption from the electrodes rather than from nanotubes. In Ti-nanotube contact where the Schottky barrier plays an important role, photodesorption of oxygen mainly occurs from the native oxide of Ti electrodes. Decrease in the p-channel conductance arises from the metal work function change which causes larger hole Schottky barrier. Non-Schottky Pd-contacted nanotube transistors do not show photodesorption effects with low intensity UV. Thermal annealing of nanotube transistors with Ti/Au electrodes also leads to the disappearance of the photodesorption effects. However, a noticeable p-doping is observed to upon air exposure after thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N16.2
Copyright
Copyright © Materials Research Society 2004

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