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Phosphorus and Boron Doping of a-Si:H Effects of Deposition Temperature

Published online by Cambridge University Press:  26 February 2011

M. J. M. Pruppers ,
K. H. M. Maessen ,
J. Bezemer ,
F. H. P. M. Habraken  and
W. F. van der Weg
M. J. M. Pruppers
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands.
K. H. M. Maessen
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands.
J. Bezemer
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands.
F. H. P. M. Habraken
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands.
W. F. van der Weg
Affiliation:
Department of Atomic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands.
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Abstract

Heavily phosphorus and boron doped hydrogenated amorphous silicon films were deposited in the temperature range 50 to 300 °C. Concentrations of P, B and H, IR spectra and room temperature conductivity have been measured. When the deposition temperature is raised from 50 to 300 °C the concentration of P increases, while the concentration of B decreases. The dark conductivity of both P and B doped films decreases dramatically when the deposition temperature is lowered. We interpret these results on the basis of assumptions concerning the microstructure of the deposited films, and especially the variation of this structure with deposition temperature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 131
Copyright
Copyright © Materials Research Society 1987

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