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Phase Transformation Kinetics of TiSi2

Published online by Cambridge University Press:  21 February 2011

R.R. Mann ,
L.L. Clevenger  and
Q.Q. Hong
R.R. Mann
Affiliation:
IBM Technology Products, Essex Junction, VT 05452
L.L. Clevenger
Affiliation:
IBM T.J.Watson Research Center, Yorktown Heights, NY 10598
Q.Q. Hong
Affiliation:
IBM T.J.Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The microstructure and kinetics of the polymorphic C49 to C54-TiSi2 phase transformation have been studied using samples prepared as in self-aligned silicide applications. For C49-TiSi2 thin films formed at temperatures of 600°C and 625°C on (100) single-crystal silicon substrates, the effective activation energy was 5.6 ± 0.3 and 5.7 ± 0.08 eV, respectively, for this phase transformation carried out in the temperature range of 600°C to 700°C. The transformation process was observed to occur by nucleation and growth of the orthorhombic face-centered (C54) phase from the as-formed orthorhombic base-centered (C49) phase.

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References

REFERENCES

1 Laves, F. et al. , Z.Kristallogr., 101 78 (1979).Google Scholar
2 Beyers, R. and Sinclair, R., J.Appl.Phys. 57 (12) 5240 (1985).CrossRefGoogle Scholar
3 Cotter, P.G. et al. , J.Am. Ceram.Soc., 39 11 (1956).Google Scholar
4 Jeon, H. and Nemanich, R.J., Thin Solid Films, 184 357 (1990).CrossRefGoogle Scholar
5 Thompson, R.D., Takai, H., Psaras, P.A., and Tu, K.N., J.Appl. Phys., 61, (2) 540 (1987).Google Scholar
6 Li, X.-H., Carlsson, R.A., Gong, S.F., and Hentzell, H.T.G., J. Appl. Phys., 72, 514, (1992).Google Scholar
7 Houtum, H.J.W. van, Raaijmakers, I.J. M.M., J.Mat.Res.Soc.Symp.Proc.,54 37–42 (1986).CrossRefGoogle Scholar
8 Houtum, H.J.W. van, Raaiimakers, I.J. M.M. and Menting, T.J.M., J. Appl. Phys., 61, 3116, (1987).Google Scholar
9 Lasky, J.B., Nakos, J.S., Cain, O.J., and Geiss, P.J., IEEE Trans. on Electron Devices, 38, (2) 262–269 (1991).Google Scholar
10 Pramanik, D. et al. , Semiconductor Int. May, 94–100(1985).Google Scholar
II Alperin, M.E. et al. , IEEE Trans. on Elec. Devices, Vol. Ed–32, (2) 141 (1985).Google Scholar
12 Mann, R.W., Racine, C.A., and Bass, R.S., Mat. Res. Soc. Symp. Proceedings, 224 115 (1991).Google Scholar
13 Mann, R.W., Racine, C.A., J. Elec. Chem. Soc., Extended Abstract 272, Spring meeting (1992).Google Scholar