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P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates

Published online by Cambridge University Press:  17 March 2011

Ming Wu  and
Sigurd Wagner
Ming Wu
Affiliation:
Department of Electrical Engineering, Princeton UniversityPrinceton, NJ 08544, USA
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton UniversityPrinceton, NJ 08544, USA
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Abstract

We fabricated self-aligned polycrystalline silicon (polysilicon) thin film transistors on flexible steel substrates. The polysilicon was formed by furnace crystallization of hydrogenated amorphous silicon at 950°C/20sec or 750°C/2min. The TFTs made from these polysilicon films have hole field effect mobilities in the linear regime of 22 cm2·V−1s−1 (950°C) and 14 cm2·V−1s−1 (750°C). The OFF current at 10 V drain-source voltage is 10−10A and the drain current ON/OFF ratio is ∼106.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A17.2
Copyright
Copyright © Materials Research Society 2001

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References

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