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PbTiO3 Films Deposited by an Alternating Dual-Target Ion Beam Sputtering Technique

Published online by Cambridge University Press:  25 February 2011

B.E. Cole ,
R.D. Horning  and
P.W. Kruse
B.E. Cole
Affiliation:
Honeywell Sensor and System Development Center 10701 Lyndale Avenue South Bloomington, MN 55420
R.D. Horning
Affiliation:
Honeywell Sensor and System Development Center 10701 Lyndale Avenue South Bloomington, MN 55420
P.W. Kruse
Affiliation:
Honeywell Sensor and System Development Center 10701 Lyndale Avenue South Bloomington, MN 55420
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Abstract

Thin films, 0.2 μm to 2 μm thick, of ferroelectric PbTiO3 have been deposit ed on Pt coated Si wafers using a novel dual target ion beam sputtering technique. The sputtering targets of PbO and Ti are shuttled back and forth into a Xe ion beam, depositing very thin (10 - 15 Å) alternating layers of PbO and TiO2. The substrate is heated in situ, allowing interdiffusion of the thin layers into a homogeneous PbTiO3 film. Film composition can be controlled accurately and repeatably by controlling the ratio of the sputtering times from each target. Structural characteristics were analyzed by x-ray diffraction, Rutherford backscattering as a function of the sputtering time ratio and the deposition temperature on Pt and Si3N4 coated Si substrates. The stoichiometric PbTiO3 films have a tetragonal perovskite structure with a slight c-axis preference. Capacitor structures show ferroelectric hysterisis loops, dielectric constants of 100-250, loss tangents between 0.002 and 0.04 and a pyroelectric coefficient greater than 5 x 10−8 C/cm2 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 185
Copyright
Copyright © Materials Research Society 1992

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