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Passivation of Ion-Beam-Induced Defects at and Around the Si-SiO2 Interface by Ion Beam Hydrogenation

Published online by Cambridge University Press:  26 February 2011

S. Kar ,
K. Srikanth  and
S. Ashok
S. Kar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology, Kanpur-208016, India
K. Srikanth
Affiliation:
Center for Electronic Materials & Processing, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Center for Electronic Materials & Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

Electronic defects were introduced at and around the Si-SiO2 interface by exposing thermally-oxidized silicon samples to a 16 keV Si ion beam in an ion implanter. The oxide thickness was 350 Å. Following Si self-implantation, hydrogenation was carried out at room temperature by a 400 eV hydrogen ion beam from a Kaufman source. Experimental results obtained from the admittance-voltage-frequency measurements of the metal-oxide-silicon structures indicated significant passivation of the ion-beam-induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1049
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Kar, S., Raychaudhuri, A., Sinha, A. K., and Ashok, S., Appl. Surf. Sci. 48/49, 264 (1991).CrossRefGoogle Scholar
2. Kar, S., Pandey, A., Raychaudhuri, A., and Ashok, S., J. Electrochem. Soc. 139, xxxx (1992).Google Scholar
3. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping Ranpe of Ions in Solids (Pergamon Press, New York, 1985).Google Scholar
4. Pankove, J. I., Semiconductors and Semimetals, Vol. 34 (Academic Press Inc., New York, 1991), p. 45.Google Scholar
5. Raychaudhuri, A., Chatterjee, S., Ashok, S., and Kar, S., IEEE Trans. Electron. Devices 38, 316 (1991).Google Scholar