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Oxidation Studies of Silicon Oxynitride Using X-Ray Photoelectron Spectroscopy and Transmission Electron Microscopy

Published online by Cambridge University Press:  10 February 2011

D. Manessis ,
H. Du ,
I. L. Singer  and
R. Larker
D. Manessis
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
H. Du
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
I. L. Singer
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, D.C 20375
R. Larker
Affiliation:
Division of Engineering Materials, Lulea University of Technology, Lulea S-97187, Sweden
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Abstract

Silicon oxynitride (Si2N2O) ceramics were oxidized in 1 atm dry oxygen at 11 00IC and 13000C. The oxidized samples were studied using x-ray photoelectron spectroscopy and crosssectional transmission electron microscopy in conjunction with energy dispersive x-ray analysis. TEM characterization revealed the chemical abruptness of the SiO2 and Si2N2O interface. Further investigation indicated the inclusions of residual SiO2 in Si2N2O, which contributed to the broad XPS elemental distribution in the oxide-substrate interface region.

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References

REFERENCES

1. Billy, M., Bosh, P., Dumazeau, C., Glandus, J. C., and Goursat, P., Ceram. Int., 7, 13–18 (1981).Google Scholar
2. Ohashi, M., Kanzaki, S., and Tabata, H., J. Am. Ceram. Soc., 74, 109–14, (1991).Google Scholar
3. Washburn, M., Am. Ceram.Soc. Bull., 46, 667–71 (1967).Google Scholar
4. Goursat, P., Lortholary, P., Terard, T., and Billy, M., pp. 315–26 in Proceedings of the 7 th International Symposium on Reactivity of Solids. Edited by Anderson, J. S., Roberts, M. W., and Stone, F. S.. Halsted Press, New York, 1972.Google Scholar
5. Du, H., Tressler, R. E., Spear, K. E., and Pantano, C. G., J. Electrochem. Soc., 136 [5] 1527–35 (1989).Google Scholar
6. Du, H., Tressler, R. E., and Spear, K. E., J. Electrochem. Soc., 136 [11] 3210–5 (1989).Google Scholar
7. Ogbuji, L. U. J. T., J. Am. Ceram. Soc., 75 [11] 2995–3000 (1992).Google Scholar
8. Persson, J., Kall, P-O, Nygren, M., J. Am. Ceram. Soc., 75 [12] 3377–84 (1992).Google Scholar
9. Thomas, J. H. III and Hofmann, S., J. Vac. Sci. Technol. A, 3 [5] 1921–1928 (1985).Google Scholar
10. Kubler, L., Haug, R., Hill, E. K., Bolmont, D., and Gewinner, G., J. Vac. Sci. Technol. A, 4 [5] 2323–27 (1986).Google Scholar