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Oxidation and ion Damage of Diamond by Reactive Ion Etching

Published online by Cambridge University Press:  21 February 2011

T. E. Beerling  and
C. R. Helms
T. E. Beerling
Affiliation:
Stanford University, Department of Electrical Engineering, Stanford, Ca. 94035.
C. R. Helms
Affiliation:
Stanford University, Department of Electrical Engineering, Stanford, Ca. 94035.
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Abstract

Oxygen is a commonly used etchant of carbon materials, including diamond. In this work, we examine the effects of oxygen ion bombardment to diamond surfaces, as might be encountered in a reactive ion etching (RIE) process. Surfaces were characterized using Electron Energy Loss Spectroscopy (EELS) and Auger Electron Spectroscopy (AES). EELS was used to determine the presence of non-diamond carbon at the surface which may form due to ion damage. AES was used to determine the presence of oxygen on the diamond surface from oxygen ion bombardment. The effect of ambient molecular oxygen present during inert ion bombardment is also addressed. EELS was also used to determine the state of diamond surfaces that were bombarded with hydrogen ions, as might be used in the removal of adsorbed oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 203
Copyright
Copyright © Materials Research Society 1994

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References

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