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The Origin of Schottky Barriers on the Cleavage P1Lane of III–V Semiconductors: Review of Some Recent Theoretical Work

Published online by Cambridge University Press:  15 February 2011

Alex Zunger
Alex Zunger*
Affiliation:
Solar Energy Research Institute, Golden, CO 80401, (U.S.A.)
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Abstract

Recent theoretical ideas on the origin of the Schottky barrier on the cleavage plane of III–V semiconductors are reviewed, using the Al/GaAs(l10) system as a benchmark.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 301
Copyright
Copyright © Materials Research Society 1982

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References

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