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Origin of Leakage Current of YMnO3 Thin Films Prepared by the Sol-Gel Method

Published online by Cambridge University Press:  10 February 2011

Hiroya Kitahata ,
Kiyoharu Tadanaga ,
Tsutomu Minami ,
Norifumi Fujimura  and
Taichiro Ito
Hiroya Kitahata
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Kiyoharu Tadanaga
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Tsutomu Minami
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Norifumi Fujimura
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
Taichiro Ito
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599–8531, Japan
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Abstract

The preparation conditions of YMnO3 thin films by the sol-gel method using yttrium alkoxide were optimized to decrease the leakage current of the films. The leakage current of the films was decreased due to the dense microstructure of the films. Moreover, the heat treatment in hydrogen atmosphere and the zirconium doping resulted in a further decrease of the leakage current. The heat treatment in hydrogen atmosphere and the zirconium doping were effective in the decrease of carriers originating in the valence fluctuation of the Mn ions in YMnO3

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 481
Copyright
Copyright © Materials Research Society 2000

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