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Orientation and Electrical Resistivity of Aluminum Oxide Films Prepared by Ion Beam Assisted Plasma Cvd

Published online by Cambridge University Press:  10 February 2011

H. Nakai ,
O. Harasaki  and
J. Shinohara
H. Nakai
Affiliation:
Research Institute, Ishikawajima-Harima Heavy Industries Co., Ltd., 1–15, Toyosu 3-chome, Koto-ku, Tokyo 135, Japan, hiroshi-nakai@ihi.co.jp
O. Harasaki
Affiliation:
Research Institute, Ishikawajima-Harima Heavy Industries Co., Ltd., 1–15, Toyosu 3-chome, Koto-ku, Tokyo 135, Japan, hiroshi-nakai@ihi.co.jp
J. Shinohara
Affiliation:
Research Institute, Ishikawajima-Harima Heavy Industries Co., Ltd., 1–15, Toyosu 3-chome, Koto-ku, Tokyo 135, Japan, hiroshi-nakai@ihi.co.jp
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Abstract

Aluminum oxide (A12O3) films were prepared on a nickel based superalloy (Inconel 718) by ion beam assisted plasma CVD at the multiple incident angles of the ion beams to a substrate. Crystal structure of these films was analyzed by X-ray diffraction (XRD). Electrical resistance of the films was measured at temperatures ranging from room temperature to 850°C. The incident angle of the ion beams influenced the orientation of A12O3 crystals. The net integrated intensity was calculated in order to compare the intensity among the different thickness samples whose thickness is thinner than X-ray penetration depth. The electrical resistivity depends on the relative X-ray intensity of (110) and (300) of α-A12O3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 319
Copyright
Copyright © Materials Research Society 1998

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References

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