Published online by Cambridge University Press: 25 February 2011
We repon on the syntheses, structural and thermoanalytical studies of two titanium complexes CpTiCl2N(SiMe3)2 and FTi[N(Sime3)2]3 and one vanadium complex V(NEt2)4. CpTiCl2N(SiMe3)2 has been used in a hot wall CVD reactor as a precursor to titanium nitride. Thin films of typically 1 XPS in thickness have been deposited at 600°C on glass, silicon and tool steel. XPS analyses of the deposits show titanium carbonitride to be formed. The new FTi[N(Sime3)2]3 complex can also be used as a precursor to titanium nitride. V(NEt2>4 led at 500°C to the deposition of vanadium carbonitride characterized by XPS analysis. Films tended to contain excess free carbon.