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Optimizing Fabrication of Buried Oxide Channel Field Effect Transistors

Published online by Cambridge University Press:  10 February 2011

A.G. Schrott ,
J.A. Misewich ,
M. Copel ,
D.W. Abraham  and
D.A. Neumayer
A.G. Schrott
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
J.A. Misewich
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
M. Copel
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
D.W. Abraham
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
D.A. Neumayer
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

In this paper we describe improved methods of fabrication for an oxide channel field effect transistor (OxFET) similar in architecture to a conventional FET. We demonstrate that a substrate treatment consisting of a low power oxygen ashing followed by annealing yields a strontium (A-site) terminated surface in single-crystal strontium titanate (STO). This surface termination of the substrate results in pulsed laser deposited cuprate-channel films of improved quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 25
Copyright
Copyright © Materials Research Society 2000

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References

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