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Optically Detected Magnetic Resonance Studies of Complex Antisite-Related Defects in Bulk Lec GaP

Published online by Cambridge University Press:  26 February 2011

W. M. Chen ,
M. Godlewski ,
B. Monemar  and
H. P. Gislason
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Godlewski
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H. P. Gislason
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

A range of PGa antisite-related complex defects in LEC GaP:Cu, Li was observed with optically detected magnetic resonance. These isoelectronic defects are formed by a compensation of the PGa double donor by the CUGadouble acceptor on adjacent cation sites. T electronic structure of these defects is discussed, as well as their role in non-radiative recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 467
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Permanent address: Institute of Physics, Polish Acad. Sci., 02-668 Warsaw A1.Lotnikow 32/46, Poland

**

Permanent address: Science Institute, University of Iceland Dunhaga 3, 107 Reykiavik Iceland

References

REFERENCES

1.Kaufmann, U., Schneider, J. and Räuber, A., Appl. Phys. Lett. 29, 312 (1976).Google Scholar
2.Wagner, R.J., Krebs, J.J., Stauss, G.H. and White, A.M., Solid State Commun. 36, 15 (1981).Google Scholar
3.Kennedy, T.A. and Wilsey, N.D., Appl. Phys. Lett. 44, 1089 (1984).Google Scholar
4.Killoran, N., Cavenett, B.C., Godlewski, M., Kennedy, T.A. and Wilsey, N.D., J. Phys. C15, L723 (1982).Google Scholar
5.Chen, W.M., Godlewski, M. and Monemar, B., to be published.Google Scholar
6.Kaminska, M., Skowronski, M., Lagowski, J., Parsey, J.M. and Gatos, H.C., Appl. Phys. Lett. 43, 302 (1983).Google Scholar
7.Kaminska, M., Skowronski, M. and Kuszko, W., Phys. Rev. Lett. 55, 2204 (1985).Google Scholar
8.Kennedy, T.A. and Wilsey, N.D. in Proc. of 13th Int. Conf. on Defects in Semiconductors, eds.: Kimerling, L.C. and Parsey, J.M., Jr. The Metallurgical Society of AIME, Warrentown, 1985, p.929.Google Scholar
9.Meyer, B.K., Hofmann, D.M., Niklas, J.R. and Spaeth, J.-M., Phys. Rev. B 36, 1332 (1987).Google Scholar
10.Manasreh, M.O. and Covington, B.C., Phys. Rev. B 36, 2730 (1987).Google Scholar
11.Chen, W.M., Gislason, H.P. and Monemar, B., Phys. Rev. B 36, 5058 (1987).Google Scholar
12.Chen, W.M., Godlewski, M. and Monemar, B., to be published.Google Scholar
13.Van Vechten, J.A., in Handbook of Semiconductors Vol.3, ed.: Keller, S.P., North Holland, 1980, p.l.Google Scholar
14.Chen, W.M., Godlewski, M. and Monemar, B., unpublished.Google Scholar