Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-09-21T05:58:31.804Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs

Published online by Cambridge University Press:  28 February 2011

D. E. Aspnes ,
J. P. Harbison ,
A. A. Studna  and
L. T. Florez
D. E. Aspnes
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
J. P. Harbison
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
A. A. Studna
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
L. T. Florez
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
Get access

Abstract

We compare the dynamic responses of reflection high energy electron diffraction (RHEED) and optical reflectance-difference (RD) signals caused by abrupt changes in incident fluences of Ga and As during MBE growth of GaAs on (001) GaAs. Our results reveal that RHEED and RD originate mainly, although not completely, from structural order and chemical bonding, respectively, and thus provide complementary information for real-time studies of MBE growth. We also measure the wavelength dependence of the RD spectrum and show that it can be described approximately from 2 to 4 eV by a single Lorentzian absorption line centered at 2.4 eV.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 57
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Arthur, J. R. and LePore, J. J., J. Vac. Sci. Technol. 6, 545 (1969).Google Scholar
2. Cho, A. Y., Surface Sci. 17 494 (1969).Google Scholar
3. Neave, J. H., Joyce, B. A., Dobson, P. J., and Norton, N., Appl. Phys. A31, 1 (1983).Google Scholar
4. Van Hove, J. M., Cohen, P. I., and Lent, C. S., J. Vac. Sci. Technol. A1, 546 (1983).Google Scholar
5. Sakamoto, T., Funabashi, H., Ohta, K., Nakagawa, T., Kawai, N. J., Kojima, T., and Bando, Y., Superlatt. and Microstruc. 1, 347 (1985).Google Scholar
6. Madhukar, A., Lee, T. C., Yen, M. Y., Chen, P., Kim, J. Y., Ghaisas, S. V., and Newman, P. G., Appl. Phys. Lett. 46, 1148 (1985).Google Scholar
7. Chen, P., Madhukar, A., Kim, J. Y., and Lee, T. C., Appl. Phys. Lett. 48, 650 (1986).Google Scholar
8. Lewis, B. F., Grunthaner, F. J., Madhukar, A., Lee, T. C., and Fernandez, R., J. Vac. Sci. Technol. B 3, 1317 (1985).Google Scholar
9. Van Hove, J. M., Pukite, P. R., and Cohen, P. I., J. Vac. Sci. Technol. B3 563 (1985).Google Scholar
10. Aspnes, D. E. and Studna, A. A., Phys. Rev. Lett. 54, 1956 (1985).Google Scholar
11. Aspnes, D. E., J. Vac. Sci. Technol. B3, 1498 (1985).Google Scholar
12. Aspnes, D. E. and Studna, A. A., Phys. Rev. B 27 985 (1983).Google Scholar
13. Aspnes, D. E. and Studna, A. A., Rev. Sci. Instrum. 49, 291 (1978).Google Scholar
14. Vina, L. and Cardona, M., Phys. Rev. B 30, 1979 (1984).Google Scholar
15. Farrell, H. H., J. Vac. Sci. Technol. (in press.)Google Scholar
16. Larsen, P. K., van der Veen, J. F., Mazur, A., Pollmann, J., Neave, J. H., and Joyce, B. A., Phys. Rev. B 26, 3222 (1982).Google Scholar